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Meeting the design challenges of nano-CMOS Electronics |
Urban KovacPhD Student
Aims of research are to investigate current variability and nanometer scale CMOS transistors subject to random dopants variations, line edge roughness and oxide thickness variations. To develop a simulation methodology to accurately and efficiently model such devices, subject to the variations noted above, over complete range of bias conditions. The methodology will combine the accuracy of Monte Carlo simulation at high gate bias, with the efficiency of Drift Diffusion simulation at low gate bias. | |