ESSDERC/ESSCIRC Workshop
cmos variability research in europe: from atomic scale to circuits and systems
Programme
| 09.00 | Welcome and introduction, R. Clerc (NANOSIL)
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| 09.10 | Measuring and understanding device variability. Keynote, T. Hiramoto, Tokyo Univ. (MIRAI)
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| 09.40 | Link between ‘ab initio’ material simulation and variability, A. Shluger, UCL (NanoMAT)
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| 10.10 | Simulation of statistical variability introduced by discreteness of charge and matter, A. Asenov, University of Glasgow (NanoMAT)
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| 10.40 | Coffee break
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| 11.00 | Measuring and simulation of device variability at 45 nm technology generation, A. Cathignol, STMicroelectronics/IMEP (PULLNANO)
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| 11.30 | Measurement and simulation of statistical variability in FinFETs, A. Mercha, IMEC (PULLNANO)
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| 12.00 | Variability in novel device architectures, G. Iannaccone, IU.NET (NANOSIL)
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| 12.30 | Lunch
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| 13.30 | Reliable and variability-tolerant system-on-chip design strategies, B. Dierickx & M. Miranda, IMEC (REALITY)
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| 14.00 | Grid technology to support statistical device and circuit simulation, S. Roy, University of Glasgow (NanoCMOS).
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| 14.30 | Impact of variability on multicore processor architectures, S. Furber, Manchester University (NanoCMOS)
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| 15.00 | Hardware-software interactions in variability and reliability aware design, L. Benini, University of Bologna (REALITY)
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| 15.30 | Coffee break
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| 16.00 | Brainstorming session: Practical solution for Variability resistant devices, circuits and systems (A. Shluger, A. Asenov, G. Ghibaudo, S. Furber, B. Dierickx, industry representatives)
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| 17.00 | Close
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