ESSDERC/ESSCIRC Workshop
cmos variability research in europe: from atomic scale to circuits and systems

Edinburgh International Conference Centre
19th September 2008

Toshiro Hiramoto


Toshiro Hiramoto received B.S., M.S., and Ph.D degrees in electronic engineering from the University of Tokyo in 1984, 1986, and 1989, respectively. In 1989, he joined Device Development Center, Hitachi Ltd., Ome, Japan, where he was engaged in the device and circuit design of ultra-fast BiCMOS SRAMs. In 1994, he joined Institute of Industrial Science, University of Tokyo, Japan, as an Associate Professor and has been a Professor since 2002. His research interests include low power and low voltage design of advanced CMOS devices, variability in scaled CMOS, quantum effects in nano-scale MOSFETs, silicon nanowire transistors, and silicon single electron transistors.
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