ESSDERC/ESSCIRC Workshop
cmos variability research in europe: from atomic scale to circuits and systems
Edinburgh International Conference Centre
19th September 2008
19th September 2008
Augustin Cathignol
Augustin Cathignol received the M.S degree in Electronics and Telecommunications engineering from the Ecole Supérieure de Chimie Physique Electronique de Lyon, France in 2004. Then he pursued the Ph.D. degree in microelectronics engineering at Grenoble University in collaboration with STMicroelectronics at Crolles, France. He obtained his Phd degree in April 2008. His research was dedicated to the experimental identification and modelling of the statistical variability technological sources in CMOS transistors. His work covered both conventional bulk transistors and advanced transistors.
He recently joined IBM Company where his work is now dedicated to FLASH memories reliability.
modeling summer school semiconductors Semiconductors semiconductor devices education training microelectronics industry medici TMA suprem workbench Synopsys Silvaco device modeling device simulation semiconductor simulation process simulation diffusion ion implantation impurities oxidation furnace finite element industrial services finite elements calibration design semiconductor research University of Glasgow electronics electrical engineering courses MOSFET CMOS transistor BJT diode doping doping profile electrons holes potential concentration fabrication silicon Si gallium arsenide GaAs silicon germanium III-V SiGe quantum mechanics transport band structures IWCE IEDM SISPAD ESSDERC density gradient taurus monte-carlo monte carlo thin body strained silicon CMOS SiNano device physics atomistic SOI greens functions green post doctoral academic glasgow tutorial summerschool simulation