ESSDERC/ESSCIRC Workshop
cmos variability research in europe: from atomic scale to circuits and systems

Edinburgh International Conference Centre
19th September 2008

Asen Asenov


Asen Asenov received his MSc degree in solid state physics from Sofia University, Bulgaria in 1979 and the PhD degree in physics from The Bulgarian Academy of Science in 1989. He is a professor of Device Modelling, Leader of the Glasgow Device Modelling Group and Academic Director of the Glasgow Process and Device Simulation Centre he coordinates the development of 2D and 3D quantum mechanical, Monte Carlo and classical device simulators and their application in the design of advanced and novel CMOS devices. He has pioneered the simulations of statistical variability in nano-CMOS devices including random dopants, interface roughness and line edge roughness. He has over 420 publications in the above areas.
modeling summer school semiconductors Semiconductors semiconductor devices education training microelectronics industry medici TMA suprem workbench Synopsys Silvaco device modeling device simulation semiconductor simulation process simulation diffusion ion implantation impurities oxidation furnace finite element industrial services finite elements calibration design semiconductor research University of Glasgow electronics electrical engineering courses MOSFET CMOS transistor BJT diode doping doping profile electrons holes potential concentration fabrication silicon Si gallium arsenide GaAs silicon germanium III-V SiGe quantum mechanics transport band structures IWCE IEDM SISPAD ESSDERC density gradient taurus monte-carlo monte carlo thin body strained silicon CMOS SiNano device physics atomistic SOI greens functions green post doctoral academic glasgow tutorial summerschool simulation